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| MegaMOSTMFET IXTH 14N80 VDSS = 800 V = 14 A ID25 RDS(on) = 0.70 N-Channel Enhancement Mode Symbol VDSS VDGR VGS VGSM ID25 IDM PD TJ TJM T stg Test Conditions TJ = 25C to 150C TJ = 25C to 150C; RGS = 1 M Continuous Transient TC = 25C TC = 25C, pulse width limited by TJM TC = 25C Maximum Ratings 800 800 20 30 14 56 300 -55 ... +150 150 -55 ... +150 C 1.13/10 Nm/lb.in. 6 g V V V V A A W C C C TO-247 AD D (TAB) G = Gate, S = Source, D = Drain, TAB = Drain Max. lead temperature for soldering 300 1.6 mm (0.063 in) from case for 10 s Md Weight Mounting torque Features International standard package Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Low package inductance (< 5 nH) - easy to drive and to protect Fast switching times l l l l l l l l l l l l Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 800 2 4.5 100 TJ = 25C TJ = 125C 250 1 0.7 V V nA A mA Applications Switch-mode and resonant-mode power supplies Motor control Uninterruptible Power Supplies (UPS) DC choppers VDSS VGS(th) IGSS IDSS R DS(on) VGS = 0 V, ID = 3 mA VDS = VGS, ID = 250 A VGS = 20 VDC, VDS = 0 VDS = 0.8 * VDSS VGS = 0 V Advantages Easy to mount with 1 screw (isolated mounting screw hole) Space savings High power density VGS = 10 V, ID = 0.5 ID25 Pulse test, t 300 s, duty cycle d 2 % IXYS reserves the right to change limits, test conditions, and dimensions. 96518F(12/97) (c) 2000 IXYS All rights reserved 1-4 IXTH 14N80 Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 8 14 4500 VGS = 0 V, VDS = 25 V, f = 1 MHz 310 65 20 VGS = 10 V, VDS = 0.5 * VDSS, ID = 0.5 ID25 RG = 2 , (External) 33 63 32 145 VGS = 10 V, VDS = 0.5 * VDSS, ID = 0.5 ID25 30 55 50 50 100 50 170 45 80 0.42 0.25 S pF pF pF ns ns ns ns nC nC nC K/W K/W Terminals: 1 - Gate 3 - Source 2 - Drain Tab - Drain 1 2 3 TO-247 AD Outline gfs C iss C oss C rss t d(on) tr td(off) tf Q g(on) Q gs Q gd R thJC R thCK VDS = 10 V; ID = 0.5 * ID25, pulse test Dim. Source-Drain Diode Symbol IS ISM VSD t rr Test Conditions VGS = 0 V Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 14 56 1.5 800 A A V ns Millimeter Inches Min. Max. Min. Max. A 4.7 5.3 .185 .209 A1 2.2 2.54 .087 .102 A2 2.2 2.6 .059 .098 b 1.0 1.4 .040 .055 b1 1.65 2.13 .065 .084 b2 2.87 3.12 .113 .123 C .4 .8 .016 .031 D 20.80 21.46 .819 .845 E 15.75 16.26 .610 .640 e 5.20 5.72 0.205 0.225 L 19.81 20.32 .780 .800 L1 4.50 .177 P 3.55 3.65 .140 .144 Q 5.89 6.40 0.232 0.252 R 4.32 5.49 .170 .216 S 6.15 BSC 242 BSC Repetitive; pulse width limited by TJM IF = IS, VGS = 0 V, Pulse test, t 300 s, duty cycle d 2 % IF = IS, -di/dt = 100 A/s, VR = 100 V (c) 2000 IXYS All rights reserved IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 2-4 IXTH 14N80 Figure 1. Output Characteristics at 25OC 20 TJ = 25OC Figure 2. Output Characteristics at 125OC 20 16 ID - Amperes ID - Amperes VGS = 9V 8V 7V 6V TJ = 125OC 16 5V VGS = 9V 8V 7V 6V 5V 12 8 4 4V 12 8 4V 4 0 0 2 4 6 8 10 0 4 8 12 16 20 0 VDS - Volts VDS - Volts Figure 3. RDS(on) normalized to 0.5 ID25 value vs. ID 2.6 2.4 VGS = 10V TJ = 125 C O Figure 4. RDS(on) normalized to 0.5 ID25 value vs. TJ 2.6 VGS = 10V 2.4 RDS(ON) - Normalized RDS(ON) - Normalized 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0 5 2.2 2.0 1.8 1.6 1.4 1.2 ID = 7.5A ID = 15A TJ = 25OC 10 15 20 25 1.0 25 50 75 100 125 150 ID - Amperes TJ - Degrees C Figure 5. Drain Current vs. Case Temperature 20 16 Figure 6. Admittance Curves 16 14 12 ID - Amperes ID - Amperes 12 8 4 0 -50 10 8 6 4 2 TJ = 25oC TJ = 125oC -25 0 25 50 75 100 125 150 0 2 3 4 5 6 7 TC - Degrees C VGS - Volts (c) 2000 IXYS All rights reserved 3-4 IXTH 14N80 Figure 7. Gate Charge 12 10 VDS = 400V ID = 15A IG = 1mA Figure 8. Capacitance Curves 5000 Ciss 2500 VGS - Volts 8 6 4 2 0 0 50 100 150 200 250 Capacitance - pF f = 1MHz 1000 500 250 100 50 0 5 10 15 20 25 30 35 40 Crss Coss Gate Charge - nC VDS - Volts Figure 9. Source Current vs. Source to Drain Voltage 50 1 00 Figure10. Forward Bias Safe Operating Area 40 ID - Amperes ID - Amperes 10 0.1ms 1ms 30 TJ = 125OC 20 TJ = 25OC 1 TC = 25OC 10 10ms 100ms DC 0 0.2 0. 1 0.4 0.6 0.8 1.0 1.2 1.4 10 1 00 1 000 VSD - Volts VDS - Volts Figure 11. Transient Thermal Resistance 1 D=0.5 R(th)JC - K/W 0.1 D=0.2 D=0.1 D=0.05 D = Duty Cycle 0.01 D=0.02 D=0.01 Single pulse 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds (c) 2000 IXYS All rights reserved 4-4 |
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